Quantum dot integration in heterostructure solar cellsSURAPRAPAPICH, Suwaree; THAINOI, Supachok; KANJANACHUCHAI, Songphol et al.Solar energy materials and solar cells. 2006, Vol 90, Num 18-19, pp 2968-2974, issn 0927-0248, 7 p.Conference Paper

n-GaAlAs on p-GaAs heterostructure solar cells grown by molecular beam epitaxyTHAINOI, Supachok; SURAPRAPAPICH, Suwaree; SAWADSARINGKARN, Montri et al.Solar energy materials and solar cells. 2006, Vol 90, Num 18-19, pp 2989-2994, issn 0927-0248, 6 p.Conference Paper

Effect of Ga deposition rates on GaSb nanostructures grown by droplet epitaxyKUNRUGSA, Maetee; KIRAVITTAYA, Suwit; PANYAKEOW, Somsak et al.Journal of crystal growth. 2014, Vol 402, pp 285-290, issn 0022-0248, 6 p.Article

In-droplet-induced formation of InP nanostructures by solid-source molecular-beam epitaxyJEVASUWAN, Wipakorn; PANYAKEOW, Somsak; RATANATHAMMAPHAN, Somchai et al.Microelectronic engineering. 2007, Vol 84, Num 5-8, pp 1548-1551, issn 0167-9317, 4 p.Conference Paper

THE EFFECT OF THIN GAP INSERTION LAYER ON INP NANOSTRUCTURE GROWN BY METAL―ORGANIC VAPOUR PHASE EPITAXYSOE SOE HAN; PANYAKEOW, Somsak; RATANATHAMMAPHAN, Somchai et al.Canadian journal of chemical engineering. 2012, Vol 90, Num 4, pp 915-918, issn 0008-4034, 4 p.Conference Paper

Surface morphology and photoluminescence of InGaAs quantum rings grown by droplet epitaxy with varying In_0.5Ga_0.5 droplet amountPANKAOW, Naraporn; THAINOI, Supachok; PANYAKEOW, Somsak et al.Journal of crystal growth. 2011, Vol 323, Num 1, pp 282-285, issn 0022-0248, 4 p.Conference Paper

Ordered quantum dots formation on engineered template by molecular beam epitaxySURAPRAPAPICH, Suwaree; KANJANACHUCHAI, Songphol; THAINOI, Supachok et al.Microelectronic engineering. 2005, Vol 78-79, pp 349-352, issn 0167-9317, 4 p.Conference Paper

InP ring-shaped quantum-dot molecules grown by droplet molecular beam epitaxyJEVASUWAN, Wipakorn; BOONPENG, Poonyasiri; THAINOI, Supachok et al.Journal of crystal growth. 2011, Vol 323, Num 1, pp 275-278, issn 0022-0248, 4 p.Conference Paper

Influence of crystallization temperature on InP ring-shaped quantum-dot molecules grown by droplet epitaxyJEVASUWAN, Wipakorn; BOONPENG, Poonyasiri; PANYAKEOW, Somsak et al.Microelectronic engineering. 2010, Vol 87, Num 5-8, pp 1416-1419, issn 0167-9317, 4 p.Conference Paper

Molecular beam epitaxial growth of GaSb/GaAs quantum dots on Ge substratesKUNRUGSA, Maetee; KIRAVITTAYA, Suwit; SOPITPAN, Suwat et al.Journal of crystal growth. 2014, Vol 401, pp 441-444, issn 0022-0248, 4 p.Conference Paper